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Epitaxial silicide Nanowires on a Silicon Substrate
When rare earth metals are deposited onto a clean Silicon (001) surface in UHV, they can form silicide nanowires. These nanowires have interesting electronic and structural properties. Current research is focused towards controlling their growth. Characterization is done using UHV-STM, STS, AFM, as well as HRTEM.
Related Articles
J. Zhang, M.A. Crimp, Y. Cui and J. Nogami, “Self-assembled thulium silicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy”
J. Appl. Phys. 103, 064308 (2008)
G. Ye, M. A. Crimp, and J. Nogami, “Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001)”
Phys. Rev. B 74, 033104 (2006)
G. Ye and J. Nogami, “Dysprosium disilicide nanostructures on Si(001) studied by scanning tunneling microscopy and transmission electron microscopy”, Thin Solid Films 497, 48-52 (2006)
B.Z. Liu and J. Nogami, "Growth of parallel rare earth silicide nanowire arrays on vicinal Si(001)", Nanotechnology 14 (8), 873-877 (2003)
M.V. Katkov and J. Nogami, "Yb and Nd growth on Si(001)", Surf. Sci. 524, 129-136 (2003)
B.Z. Liu and J. Nogami, "An STM study of dysprosium silicide nanowires on Si(001)", J. Applied Physics 93, 593-599 (2003)
C. Ohbuchi and J. Nogami, "Holmium growth on Si(001): surface reconstructions and nanowire formation", Phys. Rev. B 66, 165323 (2002)
J. Nogami, B.Z. Liu, M.V. Katkov, C. Ohbuchi, and Norman O. Birge, "Self-Assembled rare earth silicide nanowires on Si(001)", Phys. Rev. B 63, 233305 (2001)
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